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| LS320 Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation @ +125 C Maximum Currents Drain Current Maximum Voltages Drain to Source1 Gate to Source VDSO = 20V VGSS = 20V ID = 25mA 200mW -65 to +150 C -55 to +125 C rGs = 100G YFS = 30,000S HIGH INPUT IMPEDANCE BiFET AMPLIFIER TO-72 BOTTOM VIEW S 2 3 D S 1 4 G ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL VDS VGS gfs goss rGs CISS CRSS en CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Common Source Forward Transconductance Common Source Output Conductance Gate to Source Input Resistance Input Capacitance Reverse Transfer Capacitance Noise Voltage 100 8 1.5 25 MIN -20 -12 30,000 300 -10 -7 TYP MAX UNITS V V S S G pF pF V CONDITIONS IDS = 100A, VGS = 0V IDS = 10mA, Vgs = -10V2,3 IDS = 10mA, VDS = -10V, f = 1kHz IDS = 10mA, VDS = -10V, f = 1kHz VGS = 0 to 20V, TJ to 125 C IDS = 10mA, VDS = -10V IDS = 10mA, VDS = -10V IDS = 10mA, VDS = 10V BW = 50 to 15kHz PACKAGE OPTIONS FUNCTIONAL SCHEMATIC SOT-23 TOP VIEW D G 1 3 2 TO-92 BOTTOM VIEW S D G S DSG 123 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. The gate to source voltage must never exceed 100V, t < 10ms. 3. Additional screening available Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 |
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